Development of a Classical Force Field for the Oxidised Si Surface: Application to Hydrophilic Wafer Bonding
Daniel J. Cole, Mike C. Payne, Gabor Csanyi, S. Mark Spearing, L., Colombi Ciacchi

TL;DR
This paper introduces a new classical force field for simulating oxidised silicon surfaces in water, enabling better understanding of hydrophilic wafer bonding and surface interactions.
Contribution
A novel classical potential combining Stillinger-Weber and SiO2 models for oxidised silicon surfaces, validated against DFT data, and applied to simulate wafer bonding at room temperature.
Findings
Maximum adhesion energy of 97 mJ/m2 for oxidised silicon surfaces.
Higher heat of immersion for oxidised surfaces indicating stronger water interaction.
Water structuring near the surface influences bonding and adhesion properties.
Abstract
We have developed a classical two- and three-body interaction potential to simulate the hydroxylated, natively oxidised Si surface in contact with water solutions, based on the combination and extension of the Stillinger-Weber potential and of a potential originally developed to simulate SiO2 polymorphs. The potential parameters are chosen to reproduce the structure, charge distribution, tensile surface stress and interactions with single water molecules of a natively oxidised Si surface model previously obtained by means of accurate density functional theory simulations. We have applied the potential to the case of hydrophilic silicon wafer bonding at room temperature, revealing maximum room temperature work of adhesion values for natively oxidised and amorphous silica surfaces of 97 mJ/m2 and 90mJ/m2, respectively, at a water adsorption coverage of approximately 1 monolayer. The…
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