Electronic structure of Fe (0-5 at. %) doped MoO2 thin films studied by resonant photoemission spectroscopy

TL;DR

This study investigates how Fe doping affects the electronic structure of MoO2 thin films using resonant photoemission spectroscopy, revealing changes in Mo 4d states and the emergence of Fe hybridized states.

Contribution

It provides new insights into the electronic modifications caused by Fe doping in MoO2 thin films through detailed spectroscopic analysis.

Findings

Fe doping decreases Mo 4d state contributions at lower binding energies.

A shoulder at 4.9 eV appears in doped samples, indicating Fe hybridized states.

Broad Fano-like resonance peak at ~46 eV observed in all samples.

Abstract

The electronic structure of pulsed laser deposited Mo1-xFexO2 (x=0, 0.02 and 0.05) thin films has been investigated using resonant photoemission spectroscopy near Mo-4p absorption edge. In all the samples a broad Fano- like resonance peak at ~46 eV is observed in the whole area of the valence band which indicates the contribution of the Mo-4d states in the entire valence band region. The doping of Fe in these films leads to decrease in Mo 4d states contributing to electronic states at lower binding energy region. In addition to this, we also observe a shoulder at 4.9 eV in the valence band spectra of doped samples. It is proposed that the origin of this shoulder is due to the Fe hybridised states.