Statistical switching kinetics in ferroelectrics

TL;DR

This paper introduces a new statistical switching model for ferroelectrics that accounts for realistic nucleation and polarization reversal, successfully describing retardation behavior in thin films and predicting switching exponents.

Contribution

A novel statistical switching model for ferroelectrics that differs from existing models and incorporates a time-dependent depolarization field for better accuracy.

Findings

Accurately describes retardation in polycrystalline thin films at medium/low fields.

Predicts a switching exponent n=1 in high electric fields.

Provides a better fit to experimental data than traditional models.

Abstract

By assuming a more realistic nucleation and polarization reversal scenario we build a new statistical switching model for ferroelectrics, which is different from either the Kolmogorov-Avrami-Ishibashi (KAI) model or the Nucleation-Limited-Switching (NLS) model. After incorporating a time-dependent depolarization field this model gives a good description about the retardation behavior in polycrystalline thin films at medium or low fields, which can not be described by the traditional KAI model. This model predicts correctly n=1 for polycrystalline thin films at high Eappl or ceramic bulks in the ideal case.