Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation

TL;DR

This paper models a spin MOSFET using NEGF formalism, revealing how spin relaxation at interfaces limits the magnetoresistance ratio and affects device performance under various biases.

Contribution

It introduces a NEGF-based model that incorporates spin relaxation at interfaces, providing new insights into the limits of spin MOSFET performance.

Findings

Spin relaxation reduces the MR ratio in spin MOSFETs.

MR saturates at lower bias voltages.

Detector side relaxation is more detrimental than injector side.

Abstract

A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict that this device should display a very high magnetoresistance (MR) ratio (between the cases of parallel and anti-parallel magnetizations) for the case of half-metal ferromagnets (HMF). We use the non-equilibrium Green's function (NEGF) formalism to describe tunneling and carrier transport in this device and to incorporate spin relaxation at the HMF-semiconductor interfaces. Spin relaxation at interfaces results in non-ideal spin injection. Minority spin currents arise and dominate the leakage current for anti-parallel magnetizations. This reduces the MR ratio and sets a practical limit for spin MOSFET performance. We found that MR saturates at a lower value for smaller source-to-drain bias. In addition, spin relaxation at the detector side is found to be more detrimental to MR than that at the injector side, for drain bias less than the energy difference of the minority spin edge and the Fermi level.