Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs

TL;DR

This study compares the performance of graphene nanoribbon FETs with Schottky contacts and doped reservoirs using atomistic 3D simulations, highlighting the impact of non-idealities on device robustness.

Contribution

It provides a detailed simulation-based comparison of GNR FETs with different contact types and analyzes the effects of various defects on their performance.

Findings

Ideal MOSFETs outperform SBFETs in electrical performance.

Edge roughness and vacancies significantly degrade device performance.

MOSFETs exhibit more robust characteristics against non-idealities.

Abstract

We present an atomistic 3D simulation study of the performance of graphene nanoribbon (GNR) Schottky barrier (SB) FETs and transistors with doped reservoirs (MOSFETs) by means of the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green's function (NEGF) formalism. Ideal MOSFETs show slightly better electrical performance, for both digital and THz applications. The impact of non-idealities on device performance has been investigated, taking into account the presence of single vacancy, edge roughness and ionized impurities along the channel. In general, MOSFETs show more robust characteristics than SBFETs. Edge roughness and single vacancy defect largely affect performance of both device types.