Nonequilibrium carriers in an intrinsic graphene under interband photoexcitation
A. Satou, F.T. Vasko, and V. Ryzhii

TL;DR
This paper investigates nonequilibrium electron-hole distributions in intrinsic graphene under IR radiation, revealing how energy relaxation, saturation effects, and pumping intensity influence carrier distributions, population inversion, and conductivity.
Contribution
It introduces a kinetic model accounting for energy relaxation and generation-recombination, showing saturation effects and nonlinear conductivity behavior under IR pumping in graphene.
Findings
Carrier distributions can form plateaus at high intensities.
Population inversion occurs below pumping energy at strong IR pumping.
Graphene conductivity shows nonlinear dependence on pumping intensity.
Abstract
We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under far- and mid-infrared (IR) radiation in a wide range of its intensities. The energy distributions of carriers are calculated using a quasiclassic kinetic equation which accounts for the energy relaxation due to acoustic phonons and the radiative generation-recombination processes associated with thermal radiation and the carrier photoexcitation by incident radiation. It is found that the nonequilibrium distributions are determined by an interplay between weak energy relaxation on acoustic phonons and generation-recombination processes as well as by the effect of pumping saturation. Due to the effect of saturation, the carrier distribution functions can exhibit plateaus around the pumping region at elevated intensities. As shown, at sufficiently strong mid-IR pumping, the population…
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