Molecular Beam Epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis

TL;DR

This study investigates the magnetic, electrical, and structural properties of (Ga,Mn)(As,P) layers grown by molecular beam epitaxy, revealing perpendicular magnetic anisotropy and metallic behavior, with potential applications in micromagnetic research.

Contribution

It provides experimental data on (Ga,Mn)(As,P) layers with perpendicular magnetic anisotropy, highlighting the effects of phosphorous concentration on magnetic and electrical properties.

Findings

Layers are under tensile strain causing perpendicular magnetic easy axis.

Magnetic anisotropy and coercive field increase with phosphorous content.

Resistivity shows metallic behavior, increasing with phosphorous concentration.

Abstract

We present an experimental investigation of the magnetic, electrical and structural properties of Ga0.94Mn0.06As1-yPy layers grown by molecular beam epitaxy on GaAs substrates for y less than or equal to 0.3. X-ray diffraction measurements reveal that the layers are under tensile strain which gives rise to a magnetic easy axis perpendicular to the plane of the layers. The strength of the magnetic anisotropy and the coercive field increase as the phosphorous concentration is increased. The resistivity of all samples shows metallic behaviour with the resistivity increasing as y increases. These materials will be useful for studies of micromagnetic phenomena requiring metallic ferromagnetic material with perpendicular magnetic anisotropy.