Electrical and magnetic properties of nano-scale Pi-junctions

TL;DR

This research investigates nano-scale Nb Josephson junctions with ferromagnetic barriers, demonstrating controllable 0-π phase transitions and potential applications in quantum and spintronic devices.

Contribution

It presents the fabrication and analysis of nano-scale Nb/ferromagnet/Nb π-junctions with minimal magnetic dead layers and controlled barrier thickness, advancing quantum device development.

Findings

Successful fabrication of nano-scale Nb/ferromagnet/Nb π-junctions.

Oscillations in critical current reveal exchange energy close to bulk ferromagnets.

Potential use in quantum information systems and magnetoresistive devices.

Abstract

The physics of the "Pi" phase shift in ferromagnetic Josephson junctions enables a range of applications for spin-electronic devices and quantum computing. In this respect our research is devoted to the evaluation of the best materials for the development and the realization of the quantum devices based on superconductors and at the same point towards the reduction of the size of the employed heterostructures towards and below nano-scale. In this chapter we report our investigation of transitions from "0" to "Pi" states in Nb Josephson junctions with strongly ferromagnetic barriers of Co, Ni, Ni$_{80}$Fe$_{20}$ (Py) and Fe. We show that it is possible to fabricate nanostructured Nb/ Ni(Co, Py, Fe)/Nb $\pi$-junctions with a nano-scale magnetic dead layer and with a high level of control over the ferromagnetic barrier thickness variation. In agreement with the theoretical model we estimate, from the oscillations of the critical current as function of the ferromagnetic barrier thickness, the exchange energy of the ferromagnetic material and we obtain that it is close to bulk ferromagnetic materials implying that the ferromagnet is clean and S/F roughness is minimal. We conclude that S/F/S Josephson junctions are viable structures in the development of superconductor-based quantum electronic devices; in particular Nb/Co/Nb and Nb/Fe/Nb multilayers with their low value of the magnetic dead layer and high value of the exchange energy can readily be used in controllable two-level quantum information systems. In this respect, we discuss applications of our nano-junctions to engineering magnetoresistive devices such as programmable pseudo-spin-valve Josephson structures.