Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers

TL;DR

This study demonstrates how phosphorus incorporation in (Ga,Mn)As layers can control magnetic anisotropy by modifying epitaxial strain, enabling easy axis reorientation and offering an alternative to metamorphic methods for magnetic device applications.

Contribution

It introduces phosphorus doping as a novel method to tune magnetic anisotropy in (Ga,Mn)As layers by strain engineering, providing a new approach for magnetic property control.

Findings

Phosphorus incorporation reduces or reverses epitaxial strain.

High P concentration reorients the magnetic easy axis toward the growth direction.

This method offers an alternative to metamorphic techniques for magnetic anisotropy control.

Abstract

A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects stongly affect the domain wall propagation.