Quantum states and localisation of developable Moebius nanostructures

TL;DR

This paper investigates the quantum electronic states in developable Moebius nanostructures, revealing how geometry influences electron localization and potential transport channels in nanoscale devices.

Contribution

It introduces a geometric approach to analyze quantum states in wide Moebius strips, highlighting the effect of curvature on electron localization and transport.

Findings

Electrons become more localized in high-curvature regions of wider Moebius strips.

Higher width structures show increased electron localization, especially near sharp creases.

The geometric formulation can be applied to study transport in nanoscale Moebius components.

Abstract

The equilibrium equations for wide, developable, Moebius strips undergoing large deformations have recently been derived, and solved, numerically. We use these results to compute the eigenvalues and eigenstates of non-interacting electrons confined to Moebius strips of linking number up to 1.5 and of arbitrary width. The inverse participation ratio is used to show that electrons are increasingly localised to the higher curvature regions of the higher-width structures, where sharp creases could form channels for particle transport. Our geometric formulation could be used to study transport properties of Moebius strip and other components in nanoscale devices.