High Frequency Dynamics and Third Cumulant of Quantum Noise
J. Gabelli, B. Reulet

TL;DR
This paper reports the first high-frequency measurement of the third cumulant of quantum noise in a tunnel junction, revealing how environmental effects influence non-Gaussian quantum fluctuations beyond classical charge transfer regimes.
Contribution
It provides the first experimental investigation of the third cumulant of quantum noise at high frequency, addressing environmental influences and zero-point fluctuation effects in quantum regimes.
Findings
Environmental effects significantly influence quantum noise measurements.
The third cumulant $S_3$ can be non-zero in the quantum regime.
Zero-point fluctuations maintain the equilibrium noise level $S_2= G \, \hbar \omega$.
Abstract
The existence of the third cumulant of voltage fluctuations has demonstrated the non-Gaussian aspect of shot noise in electronic transport. Until now, measurements have been performed at low frequency, \textit{i.e.} in the classical regime where voltage fluctuations arise from charge transfer process. We report here the first measurement of at high frequency, in the quantum regime . In this regime, experiment cannot be seen as a charge counting statistics problem anymore. It raises central questions of the statistics of quantum noise: 1) the electromagnetic environment of the sample has been proven to strongly influence the measurement, through the possible modulation of the noise of the sample. What happens to this mechanism in the quantum regime? 2) For , the noise is due to zero point fluctuations and…
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