A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology

TL;DR

This paper presents a monolithic SOI CMOS pixel sensor with integrated analog and digital pixels, demonstrating its potential for particle tracking and imaging through extensive testing including laser, electron beam, and irradiation experiments.

Contribution

It introduces a novel monolithic pixel sensor in deep-submicron SOI CMOS technology with integrated analog and digital sections, and provides comprehensive characterization results.

Findings

Successful detection with infrared lasers and electron beams

Effective operation after irradiation with protons and neutrons

Demonstrated suitability for particle tracking and imaging applications

Abstract

A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The prototype chip features pixels of 10 micron pitch arrayed in two analog sections and one digital section with a comparator and a latch integrated in each pixel. The prototype response has been tested with infrared lasers and with the 1.35 GeV electron beam extracted from the injection booster at the LBNL Advanced Light Source. Results from irradiation tests with low energy protons and neutrons performed at the LBNL 88-inch Cyclotron are also presented.