Hot-electron noise suppression in n-Si via the Hall effect

TL;DR

This study explores how applying a magnetic field in a Hall geometry can suppress hot-electron noise in n-type silicon, leading to improved electron stability and increased drift velocity.

Contribution

It demonstrates that the Hall effect can be used to control electron fluctuations and enhance drift velocity in n-Si through Monte Carlo simulations.

Findings

Hall-effect-induced redistribution suppresses electron fluctuations

Magnetic field enhances drift velocity

Noise suppression improves electron transport stability

Abstract

We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.