Observation of inter-Landau-level quantum coherence in semiconductor quantum wells
K. M. Dani, I. A. Cotoros, J. Wang, J. Tignon, D. S. Chemla, E. G., Kavousanaki, I. E. Perakis

TL;DR
This study demonstrates the existence of long-lived inter-Landau-level quantum coherence in semiconductor quantum wells, revealing new intraband excitation dynamics through femtosecond spectroscopy and many-body theory analysis.
Contribution
It provides the first experimental observation and theoretical interpretation of inter-Landau-level quantum coherence with longer decay times than interband dephasing.
Findings
Observation of quantum beats indicating inter-Landau-level coherence
Decoherence time longer than interband magnetoexciton dephasing
Identification of new intraband excitation dynamics
Abstract
Using three-pulse four-wave-mixing femtosecond spectroscopy, we excite a non-radiative coherence between the discrete Landau levels of an undoped quantum well and study its dynamics. We observe quantum beats that reflect the time evolution of the coherence between the two lowest Landau level magnetoexcitons. We interpret our observations using a many-body theory and find that the inter Landau level coherence decays with a new time constant, substantially longer than the corresponding interband magnetoexciton dephasing times. Our results indicate a new intraband excitation dynamics that cannot be described in terms of uncorrelated interband excitations.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Quantum optics and atomic interactions
