InN/In nanocomposites: Plasmonic effects and a hidden optical gap
T. V. Shubina, V. A. Kosobukin, T. A. Komissarova, V. N. Jmerik, P. S., Kopev, S. V. Ivanov, A. Vasson, J. Leymarie, N. A. Gippius, T. Araki, T., Akagi, and Y. Nanishi

TL;DR
This paper investigates InN/In nanocomposites, revealing plasmonic effects that influence optical properties, including a hidden optical gap and plasmon-dominated emission linked to In clusters and electromagnetic enhancement.
Contribution
It uncovers the plasmonic origin of emission and absorption features in InN/In nanocomposites, highlighting the role of In clusters and electromagnetic effects in their optical behavior.
Findings
Bright emission near 0.7 eV linked to In clusters
Absorption edge higher than thermally detected absorption
Plasmon-dominated emission and absorption mechanisms
Abstract
InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions.
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Taxonomy
TopicsPlasmonic and Surface Plasmon Research · GaN-based semiconductor devices and materials · Thermal Radiation and Cooling Technologies
