InN/In nanocomposites: Evidences of plasmonic effects and hidden gap
T. V. Shubina, V. A. Kosobukin, T. A. Komissarova, V. N. Jmerik, P. S., Kopev, S. V. Ivanov, A. Vasson, J. Leymarie, N. A. Gippius, T. Araki, T., Akagi, and Y. Nanishi

TL;DR
This paper investigates InN/In nanocomposites, revealing plasmonic effects and hidden energy gaps through emission and absorption studies, highlighting electromagnetic enhancement mechanisms involving In clusters and their impact on optical properties.
Contribution
It provides experimental evidence of plasmonic effects and a hidden energy gap in InN/In nanocomposites, advancing understanding of their optical behavior.
Findings
In nanocomposites, In clusters cause bright emission near 0.7 eV.
Absorption edge is higher than thermally detected absorption onset.
Plasmonic effects are suggested by electromagnetic enhancement analysis.
Abstract
InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions.
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Plasmonic and Surface Plasmon Research · Thermal Radiation and Cooling Technologies
