Valence-Bond Dynamical Mean-Field Theory of Doped Mott Insulators with Nodal/Antinodal Differentiation

TL;DR

This paper develops a valence-bond dynamical mean-field theory for doped Mott insulators, capturing nodal/antinodal differentiation and Fermi arc phenomena observed in cuprates.

Contribution

It introduces a minimal two-orbital cluster model with a self-consistent bath to describe momentum-space differentiation in doped Mott insulators.

Findings

Reproduces Fermi arc formation in low doping regimes

Describes suppression of quasiparticles in antinodal regions

Aligns with experimental spectra of cuprates

Abstract

We introduce a valence-bond dynamical mean-field theory of doped Mott insulators. It is based on a minimal cluster of two orbitals, each associated with a different region of momentum space and hybridized to a self-consistent bath. The low-doping regime is characterized by singlet formation and the suppression of quasiparticles in the antinodal regions, leading to the formation of Fermi arcs. This is described in terms of an orbital-selective transition in reciprocal space. The calculated tunneling and photoemission spectra are consistent with the phenomenology of the normal state of cuprates. We derive a low-energy description of these effects using a generalization of the slave-boson method.