Hall coefficient and Hc2 in underdoped LaFeAsO0.95F0.05

TL;DR

This study investigates the electrical properties and upper critical field of underdoped LaFeAsO0.95F0.05, revealing an insulating ground state and an unconventional superconducting behavior with high Hc2 exceeding 75 T.

Contribution

It provides detailed measurements of resistivity, Hall coefficient, and Hc2 in underdoped LaFeAsO0.95F0.05, highlighting its insulating ground state and high upper critical field.

Findings

Normal state resistance shows insulating behavior below 70 K.

Charge carrier density includes a thermally activated component.

Upper critical field exceeds 75 T, indicating unconventional superconductivity.

Abstract

The electrical resistivity and Hall coefficient of LaFeAsO0.95F0.05 polycrystalline samples were measured in pulsed magnetic fields up to m0H = 60 T from room temperature to 1.5 K. The resistance of the normal state shows a negative temperature coefficient (dr/dT < 0) below 70 K for this composition, indicating insulating ground state in underdoped LaFeAsO system in contrast to heavily doped compound. The charge carrier density obtained from Hall effect can be described as constant plus a thermally activated term with an energy gap DE = 630 K. Upper critical field, Hc2, estimated from resistivity measurements, exceeds 75 T with zero-field Tc = 26.3 K, suggesting an unconventional nature for superconductivity.