Analytical Model of Spin-Polarized Semiconductor Lasers

TL;DR

This paper develops an analytical model for spin-polarized VCSELs, revealing enhanced threshold reduction and their potential as non-linear filters for circularly-polarized light, advancing understanding of spintronic laser devices.

Contribution

It introduces an analytical framework for spin-VCSELs with two carrier recombination modes, highlighting larger threshold reductions and spin-dependent filtering capabilities.

Findings

Threshold reduction can be larger than previously thought.

VCSELs can act as non-linear filters for circular polarization.

The model provides systematic analysis of operational regimes.

Abstract

We formulate an analytical model for vertical-cavity surface-emitting lasers (VCSELs) with injection (pump) of spin-polarized electrons. Our results for two different modes of carrier recombination allow for a systematic analysis of the operational regimes of the spin-VCSELs. We demonstrate that threshold reduction by electrically-pumped spin-polarized carriers can be larger than previously assumed possible. Near the threshold, such VCSELs can act as effective non-linear filters of circularly-polarized light, owing to their spin-dependent gain.