Investigations of thermometric characteristics of p+-n - type GaP diodes

TL;DR

This paper reports on the development and testing of p+-n GaP diodes as high-temperature sensors, demonstrating their potential for use in heat sensing applications across a broad temperature range.

Contribution

It introduces a new liquid phase epitaxial technique for GaP diode structures and evaluates their thermometric properties for high-temperature sensing.

Findings

Diodes operate reliably from 80K to 520K.

Thermometric characteristics suitable for high-temperature sensors.

Basic technical parameters of the diodes were established.

Abstract

The technique of obtaining of p+-n-type gallium phosphide diode epitaxial structures from liquid phase was developed as well as pilot samples of diode temperature sensors were fabricated based on them. Thermometric and current-voltage characteristics of the test diodes were measured in the temperature range of 80 / 520K and their basic technical characteristics were determined. An availability of application of the structures developed as sensing elements of high-temperature heat sensors was shown.