Electronic Properties Close to Dirac Cone in Two-Dimensional Organic Conductor $\alpha$-(BEDT-TTF)$_2$I$_3$

TL;DR

This paper analyzes the electronic properties near the Dirac cone in the two-dimensional organic conductor $ ext{α}$-(BEDT-TTF)$_2$I$_3$, focusing on the zero-gap state and its robustness against perturbations.

Contribution

It provides a detailed analysis of the zero-gap state in $ ext{α}$-(BEDT-TTF)$_2$I$_3$, including eigenvector characteristics, density of states, and robustness against anion potential perturbations.

Findings

Eigenvectors show exotic momentum dependence near contact point.

Density of states near Fermi point explains temperature-dependent magnetic properties.

Zero-gap state remains stable under second-order perturbations.

Abstract

A zero-gap state (ZGS) has been found in a bulk system of two-dimensional organic conductor, $\alpha$-(BEDT-TTF)$_2$I$_3$ salt which consists of four sites of donor molecules in a unit cell. In the present paper, the characteristic of the ZGS is analyzed in detail and the electronic properties are examined in the vicinity of the contact point where the conduction and valence bands degenerate to form the zero-gap. The eigenvectors of the energy band have four components of respective sites, where two of them correspond to inequivalent sites and the other two correspond to equivalent sites. It is shown that the former exhibits an exotic momentum dependence around the contact point and the latter shows almost a constant dependence. The density of states of each site close to the Fermi point is calculated to demonstrate the temperature dependence of the local magnetic susceptibility and the local nuclear magnetic relaxation rate. Further, the robust property of the ZGS against the anion potential is also shown by using the second-order perturbation.