Crystallographic Etching of Few-Layer Graphene

TL;DR

This paper introduces a method for etching few-layer graphene along crystallographic axes using thermally activated metallic nanoparticles, enabling precise edge control for potential graphene device fabrication.

Contribution

The study presents a novel crystallographic etching technique for graphene using metallic nanoparticles, advancing atomic-scale fabrication capabilities.

Findings

Achieved >1 micron crystallographic edges in graphene

Demonstrated etching process compatible with device fabrication

Potential for atomically precise graphene circuit construction

Abstract

We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 micron) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.