Electron drift velocity control in GaAs-in-Al2O3 quantum wire transistor structure due to the electron scattering rate alteration

TL;DR

This paper investigates how altering electron scattering rates via gate bias in GaAs-in-Al2O3 quantum wire transistors can control electron drift velocity, using Monte Carlo simulations to analyze surface roughness effects at different temperatures.

Contribution

It demonstrates the potential for controlling electron drift velocity through gate bias adjustments that modify scattering rates in quantum wire transistors.

Findings

Electron drift velocity is affected by surface roughness height.

Gate bias can modulate electron scattering rates.

Control of drift velocity is feasible at different temperatures.

Abstract

Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of surface roughness height on electron drift velocity at 77 and 300 K is investigated for the values of longitudinal electric field strength of 0.1 and 1.0 kV/cm. A possibility of electron drift velocity control due to variation of the bias applied to the gates, which results in the electron scattering rate alteration, is ascertained.