Theoretical method for the generation of a dark two-mode squeezed state of a trapped ion

TL;DR

This paper presents a theoretical scheme to generate a dark two-mode squeezed state in a trapped ion using a three-level system, which is robust against dissipation and adjustable via driving field intensity.

Contribution

It introduces a novel theoretical method for creating dark two-mode squeezed states in trapped ions with robustness against dissipation.

Findings

Analytical solutions match numerical simulations.

The scheme allows control over squeezing degree.

Proposed method is feasible with current technology.

Abstract

Here we show how to generate a dark two-mode squeezed state of a trapped ion, employing a three-level ion in a V configuration with a strong decay of the excited states. The degree of squeezing can be manipulated by choosing the intensity of the driving fields. Our scheme is robust against the usual dissipation mechanism and could be implemented with present-day technology. The validity of the approximations employed in this work was tested by numerical calculations, which agreed completely with the analytical solutions.