Quantum Lithography Based on Multiple Light Exposures for Arbitrary Sub-Diffraction-Limit Pattern Generation
Hee Su Park, Sun Kyung Lee

TL;DR
This paper introduces a quantum lithography method leveraging coherent population trapping and multiple light exposures to achieve arbitrary sub-diffraction-limit patterning with high resolution and robustness against decoherence.
Contribution
It presents a novel super-resolution lithography scheme that enhances resolution without altering the medium or light source, using atomic state manipulation and multiple exposures.
Findings
Achieves arbitrary super-resolution patterning.
Maintains pattern visibility despite atomic decoherence.
Does not require modifications to the photographic medium or light source.
Abstract
We propose a super-resolution quantum lithography scheme based on coherent population trapping in lambda-type atoms coupled to temporally-cascaded standing-wave driving fields. By realizing effective multiplication of optical intensity profiles on an atomic state density distribution, the scheme enables an arbitrarily high degree of resolution enhancement without modifying the atomic level structure of the photographic medium or the light source configuration. It is also shown that the visibility of the super-resolution patterns is preserved under a significant atomic state decoherence rate.
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Taxonomy
TopicsPhotonic and Optical Devices · Neural Networks and Reservoir Computing · Semiconductor Lasers and Optical Devices
