Spin memristive systems

TL;DR

This paper introduces a novel spin-based memristive system in semiconductors, demonstrating memristive behavior through time-dependent spin transport, which broadens applications in spintronics beyond ionic transport mechanisms.

Contribution

It presents a fundamentally different spintronic memristive device model based solely on electron spin, expanding the scope of memristor applications.

Findings

Direct evidence of memristive behavior in spin transport.

Spin-based memristive system differs from ionic transport models.

Potential for new applications in semiconductor spintronics.

Abstract

Recently, in addition to the well-known resistor, capacitor and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behaviour is based entirely on the electron spin degree of freedom which allows for a more convenient control than the ionic transport in nanostructures. An analysis of time-dependent spin transport at a semiconductor/ferromagnet junction provides a direct evidence of memristive behaviour. Our scheme is fundamentally different from previously discussed schemes of memristive devices and broadens the possible range of applications of semiconductor spintronics.