Resistance fluctuations and Aharonov-Bohm-type oscillations in antidot arrays in the quantum Hall regime

TL;DR

This study investigates resistance fluctuations and Aharonov-Bohm oscillations in antidot arrays within the quantum Hall regime, revealing distinct behaviors and underlying mechanisms related to edge states and screening effects.

Contribution

It provides a detailed analysis of two types of oscillatory effects in antidot lattices, emphasizing the roles of edge states and screening in quantum Hall systems.

Findings

Aperiodic resistance fluctuations linked to complex channel evolution

AB-type oscillations associated with edge states around antidots

Self-consistent screening significantly influences both phenomena

Abstract

Resistance fluctuation phenomenon in antidot lattices in the quantum Hall regime are studied. Magnetoresistance of finite antidot array systems in the quantum Hall plateau transition regime exhibits two types of oscillatory effect. One is the aperiodic resistance fluctuations (RFs) and the other is the Aharonov-Bohm (AB)-type oscillations. Their dependences on the magnetic field and the gate voltage are quite distinct. While the aperiodic RFs are attributed to the complex evolution of the conducting network of compressible channels, the AB-type oscillations are interpreted in terms of edge states formed around individual antidots. The self-consistent screening effect is important for the both phenomenon, whereas, the single electron charging effect plays a minor role in the present case.