$L$-valley electron $g$ factor in bulk GaAs and AlAs

TL;DR

This study investigates the anisotropic Landé g-factor of conduction electrons in the L-valley of bulk GaAs and AlAs using advanced theoretical models, revealing the influence of remote bands and consistency across models in typical experimental configurations.

Contribution

It provides a detailed analysis of the anisotropic g-factor in L-valleys of GaAs and AlAs, highlighting the effects of remote bands and model dependence.

Findings

g_perp is close to free electron value

g_parallel is strongly affected by remote bands

Different models agree in Voigt configuration

Abstract

We study the Land\'e $g$-factor of conduction electrons in the $L$-valley of bulk GaAs and AlAs by using a three-band $\mathbf{k}\cdot\mathbf{p}$ model together with the tight-binding model. We find that the $L$-valley $g$-factor is highly anisotropic, and can be characterized by two components, $g_{\perp}$ and $g_{\|}$. $g_{\perp}$ is close to the free electron Land\'e factor but $g_{\|}$ is strongly affected by the remote bands. The contribution from remote bands on $g_{\|}$ depends on how the remote bands are treated. However, when the magnetic field is in the Voigt configuration, which is widely used in the experiments, different models give almost identical $g$-factor.