Electric Field Induced Transformation of Magnetic Domain Structure in Magnetoelectric Iron Garnet Films

TL;DR

This study demonstrates electric field-induced magnetic domain wall motion in epitaxial iron garnet films at room temperature, revealing potential for electric control of magnetic properties in specific crystallographic orientations.

Contribution

It reports the first observation of electric field-induced domain wall motion in iron garnet films at room temperature, highlighting orientation-dependent effects.

Findings

Electric field induces domain wall motion in (210) and (110) films.

Domain wall velocity ranges from 30-50 m/s under electric pulses.

Velocity comparable to magnetic field pulse effects.

Abstract

The room temperature magnetoelectric effect was observed in epitaxial iron garnet films that appeared as magnetic domain wall motion induced by electric field. The films grown on gadolinium-gallium garnet substrates with various crystallographic orientations were examined. The effect was observed in (210) and (110) films and was not observed in (111) films. Dynamic observation of the domain wall motion in 400 V voltage pulses gave the value of domain wall velocity in the range 30-50 m/s. The same velocity was achieved in magnetic field pulse about 50 Oe.