Broadband electrical detection of spin excitations in (Ga,Mn)As using a photovoltage technique
Andr\'e Wirthmann, Xiong Hui, N. Mecking, Y. S. Gui, T. Chakraborty,, M. Reinwald, C. Sch\"uller, W. Wegscheider, C.-M. Hu

TL;DR
This paper demonstrates broadband microwave detection of spin excitations in (Ga,Mn)As using a photovoltage technique, revealing detailed magnetic properties and relaxation mechanisms, and highlighting its potential for studying ferromagnetic semiconductors.
Contribution
It introduces a broadband photovoltage method for detecting spin excitations in (Ga,Mn)As, enabling detailed analysis of magnetic resonance and relaxation processes.
Findings
Detected ferromagnetic resonance from 2 GHz to 18.5 GHz
Determined spectroscopic g-factor and relaxation contributions
Showed temperature-dependent sensitivity to crystal anisotropy
Abstract
We report on microwave photovoltage and simultaneous magnetotransport measurements in a (Ga,Mn)As film oriented normal to the magnetic field. We detect the ferromagnetic resonance over a broad frequency range of 2 GHz to 18.5 GHz and determine the spectroscopic g-factor and separate the Gilbert from the inhomogeneous contribution to magnetization relaxation. Temperature dependent measurements below the saturation magnetization indicate that the photovoltage signal can serve as a sensitive tool to study the crystal anisotropy. We demonstrate that the combination of spin dynamics with charge transport is a promising tool to study microstructured ferromagnetic semiconductor samples.
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