A gate-defined silicon quantum dot molecule
H.W.Liu, T.Fujisawa, H.Inokawa, Y.Ono, A.Fujiwara, and Y.Hirayama

TL;DR
This paper demonstrates a silicon quantum dot molecule with tunable coupling, revealing detailed excitation spectra and energy level anticrossings, advancing silicon-based quantum computing prospects.
Contribution
It introduces a silicon double quantum dot with tunable tunnel coupling and detailed spectroscopic analysis, a step forward for silicon quantum computing.
Findings
Observation of excitation spectrum in weakly coupled dots
Detection of energy level anticrossing in strongly coupled dots
Demonstration of charge and energy quantization in silicon quantum dots
Abstract
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations.
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Taxonomy
TopicsSemiconductor materials and devices · Electronic and Structural Properties of Oxides · Quantum and electron transport phenomena
