Domain walls in gapped graphene

TL;DR

This paper investigates how domain walls in gapped graphene can host localized mid-gap states that behave like one-dimensional metallic channels, potentially enabling quantum wire applications.

Contribution

It reveals the existence of mid-gap states along domain walls in gapped graphene and explores their potential to form conductive channels within a semiconducting matrix.

Findings

Domain walls support localized mid-gap states.

These states can form one-dimensional metallic channels.

Potential use as quantum wires in graphene-based devices.

Abstract

The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support mid-gap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the mid-gap band is partially filled,the domain wall can behave like a one-dimensional metal embedded in a semi-conductor, and could potentially be used as a single-channel quantum wire.