Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

TL;DR

This paper demonstrates broadband electrically detected magnetic resonance of phosphorus donors in silicon transistors at milli-kelvin temperatures, revealing hyperfine and spin-spin interactions through high-frequency spectra.

Contribution

It introduces a broadband on-chip transmission line technique for EPR in silicon transistors, enabling high-frequency operation up to 40 GHz at very low temperatures.

Findings

Detection of hyperfine-split electron spin resonances in Si:P

Observation of spin-spin scattering in 2D electron gas

Successful operation up to 40 GHz frequency

Abstract

We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas.