Hydrogen-induced metallization of the $\beta$-SiC(001) Si-rich surface
R. Rurali, E. Wachowicz, P. Hyldgaard, and P. Ordej\'on

TL;DR
This paper investigates how hydrogen exposure causes the transition of the $eta$-SiC(001) Si-rich surface from a semiconductor to a metallic state, highlighting the role of hydrogen in surface metallization.
Contribution
It presents new insights into hydrogen-induced metallization mechanisms on the $eta$-SiC(001) Si-rich surface.
Findings
Hydrogen causes surface metallization of $eta$-SiC(001)
Surface electronic properties are significantly altered by hydrogen
The study provides a detailed analysis of the metallization process
Abstract
This paper has been withdrawn by the authors (see text).
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsSilicon Carbide Semiconductor Technologies · Metal and Thin Film Mechanics · Copper Interconnects and Reliability
