Tunable spin-gaps in a quantum-confined geometry

TL;DR

This paper investigates how quantum confinement and spin-orbit effects in Bi-Ag-Si trilayers create tunable spin-dependent gaps, enabling tailored electronic properties for spintronic applications.

Contribution

It demonstrates the ability to control spin-gap structures in quantum-confined trilayers by adjusting layer thickness, advancing spintronic device design.

Findings

Spin-dependent gap structures are observed via ARPES.

Tuning the Ag buffer layer modifies the spin gaps.

Potential for designing silicon-compatible spintronic devices.

Abstract

We have studied the interplay of a giant spin-orbit splitting and of quantum confinement in artificial Bi-Ag-Si trilayer structures. Angle-resolved photoelectron spectroscopy (ARPES) reveals the formation of a complex spin-dependent gap structure, which can be tuned by varying the thickness of the Ag buffer layer. This provides a means to tailor the electronic structure at the Fermi energy, with potential applications for silicon-compatible spintronic devices.