Statistical equilibrium of silicon in the solar atmosphere
J.R. Shi, T. Gehren, K. Butler, L.I. Mashonkina, and G. Zhao

TL;DR
This paper investigates the statistical equilibrium of silicon in the solar atmosphere, analyzing line formation and deriving the solar silicon abundance with LTE and NLTE models, providing refined abundance values and insights into atomic interactions.
Contribution
It presents a detailed NLTE analysis of silicon line formation in the solar atmosphere, improving abundance determinations and model atom setups compared to previous LTE-based studies.
Findings
Solar silicon abundance is 7.52 ± 0.06.
NLTE effects are weak for most lines, with hydrogen collisions being significant.
Nearly perfect ionization equilibrium between Si I and Si II lines.
Abstract
The statistical equilibrium of neutral and ionised silicon in the solar photosphere is investigated. Line formation is discussed and the solar silicon abundance determined. High-resolution solar spectra were used to determine solar values by comparison with Si line synthesis based on LTE and NLTE level populations. The results will be used in a forthcoming paper for differential abundance analyses of metal-poor stars. A detailed analysis of silicon line spectra leads to setting up realistic model atoms, which are exposed to interactions in plane-parallel solar atmospheric models. The resulting departure coefficients are entered into a line-by-line analysis of the visible and near-infrared solar silicon spectrum. The statistical equilibrium of \ion{Si}{i} turns out to depend marginally on bound-free interaction processes, both radiative and collisional.…
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