Carrier relaxation in Si/SiO$_2$ quantum dots
A. A. Prokofiev, S. V. Goupalov, A. S. Moskalenko, A. N. Poddubny, I., N. Yassievich
TL;DR
This paper investigates carrier relaxation mechanisms in silicon quantum dots within SiO$_2$, focusing on hole-phonon interactions, Huang-Rhys factor calculations, and intraband transition probabilities involving optical phonons.
Contribution
It provides a detailed analysis of hole-phonon interactions and quantifies transition probabilities and Huang-Rhys factors in silicon quantum dots, advancing understanding of relaxation processes.
Findings
Calculated Huang-Rhys factor for hole transitions.
Estimated probability of multi-phonon intraband transitions.
Analyzed optical and nonradiative relaxation mechanisms.
Abstract
Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated for such transitions. The probability of intraband transition of a confined hole emitting several optical phonons is estimated.
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