Area dependence of interlayer tunneling in strongly correlated bilayer 2D electron systems at $\nu_T=1$
A.D.K. Finck, A.R. Champagne, J.P. Eisenstein, L.N. Pfeiffer, and K.W., West

TL;DR
This study investigates how the size of the tunneling region affects interlayer tunneling in bilayer quantum Hall systems at total filling factor one, revealing that tunneling conductance scales with area, indicating a bulk phenomenon.
Contribution
It demonstrates that in the coherent $ u_T=1$ phase, interlayer tunneling conductance is proportional to the area, highlighting the bulk nature of tunneling in this regime.
Findings
Tunneling conductance scales with the area of the tunneling region.
Tunneling at $ u_T=1$ is a bulk phenomenon near the phase boundary.
Electrostatic gates can locally define $ u_T=1$ regions for study.
Abstract
The area and perimeter dependence of the Josephson-like interlayer tunneling signature of the coherent quantum Hall phase in bilayer two-dimensional electron systems is examined. Electrostatic top gates of various sizes and shapes are used to locally define distinct regions in the same sample. Near the phase boundary with the incoherent state at large layer separation, our results demonstrate that the tunneling conductance in the coherent phase is closely proportional to the total area of the tunneling region. This implies that tunneling at is a bulk phenomenon in this regime.
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