Optically induced transport properties of freely suspended semiconductor submicron channels

TL;DR

This paper investigates how optical illumination affects transport properties in suspended AlGaAs/GaAs heterostructure channels with a 2DEG, revealing photogating and photodoping effects that enhance conductance.

Contribution

It demonstrates the optically induced transport phenomena in freely suspended submicron channels, combining experimental fabrication and analysis of photogating and photodoping effects.

Findings

Enhanced conductance due to optical effects

Time constants of 1-10 milliseconds for photoresponse

Identification of photogating and photodoping mechanisms

Abstract

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.