Microwave Rectification by a Carbon Nanotube Schottky Diode

TL;DR

This paper reports on the fabrication and characterization of carbon nanotube Schottky diodes that demonstrate high-frequency rectification up to 18 GHz, with potential for ultra-high-speed applications.

Contribution

It introduces an all-photolithographic fabrication process for high-frequency carbon nanotube Schottky diodes with detailed electrical performance analysis.

Findings

Rectify currents up to 100 nA at 18 GHz

Junction capacitance estimated at ~10-18 F

Intrinsic cut-off frequency around 400 GHz

Abstract

Carbon nanotube Schottky diodes have been fabricated in an all-photolithographic process using dissimilar contact metals on high-frequency compatible substrates (quartz and sapphire). Diodes show near-ideal behavior, and rectify currents of up to 100 nA and at frequencies up to 18 GHz. The voltage and frequency dependence is used to estimate the junction capacitance of ~10-18 F and the intrinsic device cut-off frequency of ~400 GHz.