Defect-free ZnSe nanowire and nano-needle nanostructures

TL;DR

This paper presents a method for growing defect-free ZnSe nanowires and nano-needles via molecular beam epitaxy, optimizing growth conditions to suppress stacking faults and improve material quality.

Contribution

It introduces a combined MBE growth technique for nanowires and nano-needles that reduces defects without post-processing, confirmed by microscopy and photoluminescence.

Findings

Successful suppression of stacking fault defects

Identification of growth regimes based on temperature and flux ratio

Enhanced optical properties confirmed by photoluminescence

Abstract

We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.