Characterisation of nanostructured GaSb : Comparison between large-area optical and local direct microscopic techniques
I.S. Nerbo, M. Kildemo, S. Leroy, I. Simonsen, E. S{\o}nderg{\aa}rd,, L. Holt, J.C. Walmsley

TL;DR
This study compares optical spectroscopic methods with microscopic techniques for characterizing nanostructured GaSb surfaces, demonstrating optical methods' effectiveness for large-area, non-destructive analysis of nanostructures.
Contribution
It introduces a graded anisotropic effective medium model to accurately interpret optical data in relation to surface nanostructure topography.
Findings
Good agreement between optical and microscopic measurements for cones <55 nm
Optical methods effectively estimate cone height, shape, and density
Optical techniques are fast, non-destructive, and suitable for in-situ analysis
Abstract
Low energy ion-beam sputtering of GaSb results in self-organized nanostructures, with the potential of structuring large surface areas. Characterisation of such nanostructures by optical methods is studied and compared to direct (local) microscopic methods. The samples consist of densely packed GaSb cones on bulk GaSb, approximately 30, 50 and 300 nm in height, prepared by sputtering at normal incidence. The optical properties are studied by spectroscopic ellipsometry, in the range 0.6-6.5 eV, and with Mueller matrix ellipsometry in the visible range, 1.46-2.88 eV. The optical measurements are compared to direct topography measurements obtained by Scanning Electron Microscopy (SEM), High Resolution Transmission Electron Microscopy (HR-TEM), and Atomic Force Microscopy (AFM). Good agreement is achieved between the two classes of methods when the experimental optical response of the short…
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Taxonomy
TopicsNanowire Synthesis and Applications · Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials
