Copper Electrodeposition for 3D Integration

TL;DR

This paper reviews copper electrodeposition for 3D integration, focusing on TSV filling challenges, process optimization, and electrochemical effects to enable reliable, void-free copper vias in advanced semiconductor packaging.

Contribution

It provides a comprehensive analysis of copper electrodeposition for TSV filling, highlighting challenges, electrochemical effects, and process optimization strategies for industry adoption.

Findings

Electrochemical behavior of organics affects via filling quality.

Wafer design influences process performance and throughput.

Process optimizations are necessary for void-free, efficient TSV copper filling.

Abstract

Two dimensional (2D) integration has been the traditional approach for IC integration. Due to increasing demands for providing electronic devices with superior performance and functionality in more efficient and compact packages, has driven the semiconductor industry to develop more advanced packaging technologies. Three-dimensional (3D) approaches address both miniaturization and integration required for advanced and portable electronic products. Vertical integration proved to be essential in achieving a greater integration flexibility of disparate technologies, reason for which a general trend of transition from 2D to 3D integration is currently being observed in the industry. 3D chip integration using through silicon via (TSV) copper is considered one of the most advanced technologies among all different types of 3D packaging technologies. Copper electrodeposition is one of technologies that enable the formation of TSV structures. Because of its well-known application for copper damascene, it was believed that its transfer to filling TSV vias would be easily adopted. However, as any new technology at its beginning, there are several challenges that need to be addressed and resolved before becoming a fully mature technology. This paper will address the TSV fill processes using copper electrodeposition, the advantages as well as difficulties associated with this technology and approaches taken to overcome them. Electrochemical characterization of the organics behavior and their effect on via filling will be presented. The effect of wafer design on process performance and throughput, including necessary process optimizations that are required for achieving void-free via filling while reducing the processing time, will be discussed.