A Nanostructual Microwave Probe Used for Atomic Force Microscope

TL;DR

This paper presents the development and testing of a novel GaAs-based microwave probe for atomic force microscopy, achieving nanometer-scale resolution and successful microwave emission detection.

Contribution

It introduces a new GaAs microwave probe with a waveguide structure and FIB-fabricated tip, enhancing AFM capabilities with microwave emission detection.

Findings

Achieved nanometer-scale resolution in AFM topography.

Successfully detected microwave emission at the probe tip.

Demonstrated potential for advanced AFM applications.

Abstract

In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 8 micrometers high, and curvature radius about 50 nm was formed. The dimensions of the cantilever are 250x30x15 micrometers. The open structure of the waveguide at the tip of the probe was introduced by using FIB fabrication. AFM topography of a grating sample was measured by using the fabricated GaAs microwave probe. The fabricated probe was found having nanometer scale resolution, and microwave emission was detected successfully at the tip of the probe by approaching Cr-V steel and Au wire samples.