In-Plane Bistable Nanowire For Memory Devices

TL;DR

This paper introduces a nanomechanical in-plane bistable nanowire device designed for non-volatile memory applications, demonstrating fabrication, simulation, and electrical actuation methods.

Contribution

It presents a novel in-plane bistable nanowire structure fabricated on stressed silicon dioxide, with detailed simulation and actuation techniques for memory device implementation.

Findings

Successfully fabricated a bistable nanowire structure.

Demonstrated electrical actuation and readout of the bistable states.

Provided FEM simulation results supporting the device design.

Abstract

We present a nanomechanical device design to be used in a non-volatile mechanical memory point. The structure is composed of a suspended slender nanowire (width : 100nm, thickness 430nm length : 8 to 30$\mu$m) clamped at its both ends. Electrodes are placed on each sides of the nanowire and are used to actuate the structure (writing, erasing) and to measure the position through a capactive bridge (reading). The structure is patterned by electron beam lithography on a pre-stressed thermally grown silicon dioxide layer. When later released, the stressed material relaxes and the beam buckles in a position of lower energy. Such symmetric beams, called Euler beams, show two stable deformed positions thus form a bistable structure. This paper will present the fabrication, simulation and mechanical and electrical actuation of an in plane bistable nanowire. Final paper will include a section on FEM simulations.