Zitterbewegung (trembling motion) of electrons in narrow gap semiconductors

TL;DR

This paper reviews the theoretical understanding of Zitterbewegung, a trembling motion of electrons, in various narrow-gap semiconductors and nanostructures, highlighting its transient nature and potential observation methods.

Contribution

It provides a comprehensive review of Zitterbewegung in narrow-gap semiconductors, emphasizing its transient behavior and similarities to relativistic electrons, with insights into experimental observation possibilities.

Findings

Zitterbewegung is transient with femtosecond to picosecond decay times.

ZB exhibits similarities to relativistic electron behavior.

External magnetic fields influence ZB in graphene.

Abstract

Theory of trembling motion [Zitterbewegung (ZB)] of charge carriers in various narrow-gap materials is reviewed. Nearly free electrons in a periodic potential, InSb-type semiconductors, bilayer graphene, monolayer graphene and carbon nanotubes are considered. General features of ZB are emphasized. It is shown that, when the charge carriers are prepared in the form of Gaussian wave packets, the ZB has a transient character with the decay time of femtoseconds in graphene and picoseconds in nanotubes. Zitterbewegung of electrons in graphene in the presence of an external magnetic field is mentioned. A similarity of ZB in semiconductors to that of relativistic electrons in a vacuum is stressed. Possible ways of observing the trembling motion in solids are mentioned.