Localization and interaction of indirect excitons in GaAs coupled quantum wells

TL;DR

This paper presents a new trap technique to lower the effective temperature of indirect excitons in GaAs quantum wells, revealing detailed exciton behavior and interactions through photoluminescence analysis.

Contribution

It introduces an elevated trap method for exciton cooling and provides new insights into exciton localization, interaction effects, and linewidth broadening at varying densities.

Findings

Narrow photoluminescence lines indicate individual exciton states.

Homogeneous linewidth broadening increases with exciton density.

Exciton-exciton interactions significantly affect spectral linewidths.

Abstract

We introduced an elevated trap technique and exploited it for lowering the effective temperature of indirect excitons. We observed narrow photoluminescence lines which correspond to the emission of individual states of indirect excitons in a disorder potential. We studied the effect of exciton-exciton interaction on the localized and delocalized exciton states and found that the homogeneous line broadening increases with density and dominates the linewidth at high densities.