Quantum Hall effect in bilayer and multilayer graphenes with finite gate voltage
Masaaki Nakamura, Lila Hirasawa, Ken-Ichiro Imura
TL;DR
This paper investigates the quantum Hall effect in bilayer and multilayer graphene systems under finite gate voltage, analyzing how interlayer coupling influences electronic properties and quantum Hall phenomena.
Contribution
It provides a detailed theoretical analysis of the quantum Hall effect in bilayer and multilayer graphene with finite gate voltage, highlighting the crossover from monolayer-like to strongly coupled bilayer behavior.
Findings
Crossover from monolayer to bilayer quantum Hall effect with changing interlayer coupling
Calculated magnetic susceptibility and conductivities in finite magnetic fields
Identified effects of multilayer stacking on quantum Hall phenomena
Abstract
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in finite-magnetic-field formalism, and observed crossover of integer quantum Hall effect from two independent monolayer type system to strongly coupled bilayer systems by changing the ratio of interlayer hopping energy and the gate voltage. We also discuss the case of multilayer systems with Bernal stacking
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