Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6

TL;DR

This study investigates the dielectric response of LaBiMn4/3Co2/3O6, revealing that interfacial polarization significantly affects measurements and proposing a method to isolate intrinsic dielectric properties in semiconducting materials.

Contribution

It introduces a general procedure to remove interfacial polarization effects from dielectric measurements in semiconducting perovskites.

Findings

Interfacial polarization causes large capacitance offsets.

A method to correct for interfacial effects was developed.

Intrinsic dielectric properties can be accurately measured after correction.

Abstract

Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity often is measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution then can be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.