Giant Carrier Mobility in Single Crystals of FeSb2

TL;DR

This paper reports exceptionally high carrier mobility in single crystals of FeSb2, with potential implications for solid state electronic applications, highlighting significant temperature-dependent mobility variations.

Contribution

It demonstrates giant carrier mobility in FeSb2 crystals and models the nonlinear Hall resistivity using a two-carrier approach, revealing new electronic properties.

Findings

Maximum mobility reaches ~10^5 cm^2/Vs at 8 K

Mobility drops to ~10^2 cm^2/Vs at room temperature

Hall resistivity is well described by a two-carrier model

Abstract

We report the giant carrier mobility in single crystals of FeSb2. Nonlinear field dependence of Hall resistivity is well described with the two-carrier model. Maximum mobility values in high mobility band reach ~10^5 cm^2/Vs at 8 K, and are ~10^2 cm^2/Vs at the room temperature. Our results point to a class of materials with promising potential for applications in solid state electronics.